Study of the plasma plume generated during near IR femtosecond laser irradiation of silicon targets

被引：16

作者：

Amoruso, S

Altucci, C

Bruzzese, R

de Lisio, C

Spinelli, N

Velotta, R

Vitiello, M

Wang, X

机构：

[1] Coherentia INFM, I-80126 Naples, Italy

[2] Univ Naples Federico II, Dipartimento Sci Fis, I-80126 Naples, Italy

[3] Univ Naples Federico II, INFM, Unita Napoli, I-80126 Naples, Italy

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期

关键词：

D O I：

10.1007/s00339-004-2785-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ti:sapphire femtosecond laser ablation of silicon has been investigated by Langmuir probe and time-gated optical emission spectroscopy. The measured spectra show the presence of a fast ion population preceding the main plume core of slow ions and neutrals produced by a thermal ablation mechanism. By analyzing the fluence thresholds for the emission of the two ion populations, we provide clear experimental evidence that fast ions are ejected non-thermally from the sample surface as a result of the Si surface supercritical state induced by the intense ultrashort laser pulse irradiation.

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页码：1377 / 1380

页数：4

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