Simulation of microelectrode impedance changes due to cell growth

被引：95

作者：

Huang, XQ ^{[1
]}

Nguyen, D ^{[1
]}

Greve, DW ^{[1
]}

Domach, MM ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

IEEE SENSORS JOURNAL | 2004年 / 4卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/JSEN.2004.831302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Observation of impedance changes caused by cell growth on microelectrodes provides information about cell coverage and other important quantities, such as the cell-electrode gap. In this paper, we use finite-element simulations to calculate the impedance changes caused by cell growth on electrodes comparable in size to the cell. Parameters describing the impedance of the electrode without cells are derived from measurement. The results show that the impedance magnitude is expected to increase by at least 100% for partial cell coverage. We also report the frequency dependence of the magnitude and phase of the impedance and compare the simulation results with a lumped-element model. The simulation results are important for the design and modeling of arrays of cell-sized electrodes and also for the interpretation of experiments.

引用

页码：576 / 583

页数：8

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