Thermal simulation and characterisation of the reliability of THz Schottky diodes

被引：5

作者：

Brandt, M ^{[1
]}

Schubler, M ^{[1
]}

Parmeggiani, E ^{[1
]}

Lin, CI ^{[1
]}

Simon, A ^{[1
]}

Hartnagel, HL ^{[1
]}

机构：

[1] UNIV PARMA,I-43100 PARMA,ITALY

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00134-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed stress reliability investigations have been carried out for Pt/GaAs Schottky diodes. A thermal characterisation of the devices is performed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified and investigated. A comparison between thermal stress and electrical stress shows an influence of the operating current density and the anode diameter on the device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared. (C) 1997 Elsevier Science Ltd.

引用

页码：1663 / 1666

页数：4

共 7 条

[1] Characterisation of reliability of compound semiconductor devices using electrical pulses [J].