Raman study of the relationship between nanoparticles and photoluminescence in spark-processed silicon

被引:18
作者
Rupp, S [1 ]
Quilty, J [1 ]
Trodahl, HJ [1 ]
Ludwig, MH [1 ]
Hummel, RE [1 ]
机构
[1] UNIV FLORIDA, DEPT MAT SCI & ENGN, GAINESVILLE, FL 32611 USA
关键词
D O I
10.1063/1.118249
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spark-processed silicon (sp-Si) that strongly photoluminesces (PL) in the blue and green regions of the visible spectrum has been analyzed by Raman scattering, in order to probe a possible relationship between the presence and size of Si nanoparticles and PL emission wavelengths. Spatially resolved Raman spectra were measured across spark-processed regions, scanning areas which vary in PL intensity but not wavelength. The observed small shifts and broadenings of the Raman signals indicate the presence of Si particles having diameters of about 15 nm in the central, photoluminescing section of the sp region. Slightly smaller Si crystallites with sizes of about 8-9 nm were found in the halo region which does not contribute to FL. Furthermore, the Raman peak shifts and broadenings are essentially identical for blue and green photoluminescing sp-Si. These results suggest that the PL of sp-Si is not caused by a quantum-size effect which is coupled to the presence of Si nanoparticles. (C) 1997 American Institute of Physics.
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页码:723 / 725
页数:3
相关论文
共 11 条
[1]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[2]  
GRISCOM DL, 1991, J CERAM SOC JPN, V99, P923, DOI DOI 10.2109/JCERSJ.99.923
[3]   NOVEL TECHNIQUE FOR PREPARING POROUS SILICON [J].
HUMMEL, RE ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1992, 61 (16) :1965-1967
[4]   ON THE ORIGIN OF PHOTOLUMINESCENCE IN SPARK-ERODED (POROUS) SILICON [J].
HUMMEL, RE ;
MORRONE, A ;
LUDWIG, M ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1993, 63 (20) :2771-2773
[5]   STRONG, BLUE, ROOM-TEMPERATURE PHOTOLUMINESCENCE OF SPARK-PROCESSED SILICON [J].
HUMMEL, RE ;
LUDWIG, MH ;
CHANG, SS .
SOLID STATE COMMUNICATIONS, 1995, 93 (03) :237-241
[6]   POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].
IQBAL, Z ;
WEBB, AP ;
VEPREK, S .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165
[7]   CATHODOLUMINESCING PROPERTIES OF SPARK-PROCESSED SILICON [J].
LUDWIG, MH ;
MENNIGER, J ;
HUMMEL, RE .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (47) :9081-9089
[8]  
LUDWIG MH, 1996, HDB OPTICAL MAT, V2, pCH5
[9]   PHOTOLUMINESCENCE FROM DEFECT CENTERS IN HIGH-PURITY SILICA GLASSES OBSERVED UNDER 7.9-EV EXCITATION [J].
NISHIKAWA, H ;
SHIROYAMA, T ;
NAKAMURA, R ;
OHKI, Y ;
NAGASAWA, K ;
HAMA, Y .
PHYSICAL REVIEW B, 1992, 45 (02) :586-591
[10]   CRYSTALLIZATION AND DIFFUSION IN PROGRESSIVELY ANNEALED A-GE/SIOX SUPERLATTICES [J].
WILLIAMS, GVM ;
BITTAR, A ;
TRODAHL, HJ .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1874-1878