Some peculiarities of EPR spectra of E'-centers in ion-implanted silica glasses

被引:14
作者
Bogomolova, LD
Teplyakov, YG
Deshkovskaya, AA
Caccavale, F
机构
[1] UNIV PADUA, DIPARTIMENTO FIS, INFM, I-35131 PADUA, ITALY
[2] MOSCOW MV LOMONOSOV STATE UNIV, INST NUCL PHYS, MOSCOW 119899, RUSSIA
[3] MINSK RADIOTECH INST, MINSK 220069, BELARUS
关键词
D O I
10.1016/0022-3093(96)00173-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
EPR spectra of E'-centers for a-SiO2 implanted with B+, F+, Si-29(+), P+, Ar+, Ti+, Cu+, Ag+, Sb+ and W+ at variable doses 6 x 10(14) to 1 x 10(18) ions/cm(2) at energies ranging from 30 to 380 keV are presented. It is shown that the changes in the shape of the spectra can be interpreted in terms of local environment distortions of the E'-center due to the appearance of nearby interstitials and vacancies or the replacement of one of the atoms involved in the center by an implanted or recoiled one.
引用
收藏
页码:185 / 193
页数:9
相关论文
共 23 条
[1]  
AMOSSOV AV, 1975, SOV INORG MAT, V11, P921
[2]   E1' CENTERS IN BURIED OXIDE LAYERS FORMED BY OXYGEN ION-IMPLANTATION INTO SILICON [J].
BARKLIE, RC ;
ENNIS, TJ ;
REESON, KJ ;
HEMMENT, PLF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4) :93-96
[3]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[4]  
BOGOMOLOVA LD, 1993, RIV SPERIMENTALE V S, V23, P527
[5]   CHARACTERIZATION OF DEFECTS IN AMORPHOUS SIO2 IMPLANTED WITH OXYGEN IONS [J].
DERRYBERRY, SL ;
WEEKS, RA ;
WELLER, RA ;
MENDENHALL, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :1320-1323
[6]   CREATION AND ANNEALING KINETICS OF MAGNETIC OXYGEN VACANCY CENTERS IN SIO2 [J].
DEVINE, RAB ;
GOLANSKI, A .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3833-3838
[7]   DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2 [J].
DEVINE, RAB ;
GOLANSKI, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) :2738-2740
[8]   CHARACTERIZATION OF DEFECTS FORMED IN AMORPHOUS SIO2 BY HIGH-ENERGY IONS USING ELECTRON-SPIN RESONANCE AND OPTICAL SPECTROSCOPY [J].
DOORYHEE, E ;
LANGEVIN, Y ;
BORG, J ;
DURAUD, JP ;
BALANZAT, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4) :264-267
[9]   FORMATION OF PARAMAGNETIC DEFECTS IN HIGH-PURITY SILICA BY HIGH-ENERGY IONS [J].
DOORYHEE, E ;
LANGEVIN, Y ;
BORG, J ;
DURAUD, JP ;
BALANZAT, E .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1399-1407
[10]   IRREVERSIBLE AND REVERSIBLE ANNEALING OF PARAMAGNETIC OXYGEN VACANCIES (E'1 CENTERS) IN OXYGEN-IMPLANTED AMORPHOUS SIO2 [J].
GOLANSKI, A ;
DEVINE, RAB ;
OBERLIN, JC .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1572-1576