IRREVERSIBLE AND REVERSIBLE ANNEALING OF PARAMAGNETIC OXYGEN VACANCIES (E'1 CENTERS) IN OXYGEN-IMPLANTED AMORPHOUS SIO2

被引：15

作者：

GOLANSKI, A

DEVINE, RAB

OBERLIN, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1572 / 1576

页数：5

共 28 条

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[3]

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[4]

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[7]

ARNOLD GW, 1982, RADIAT EFF, V65, P257

[8] CREATION AND ANNEALING KINETICS OF MAGNETIC OXYGEN VACANCY CENTERS IN SIO2 [J].

DEVINE, RAB ;

GOLANSKI, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3833-3838

[9] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2 [J].

DEVINE, RAB .

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[10] DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2 [J].

DEVINE, RAB ;

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JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) :2738-2740

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