MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2

被引：26

作者：

DEVINE, RAB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

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D O I：

10.1063/1.333949

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：563 / 565

页数：3

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