OXYGEN VACANCY CREATION IN SIO2 THROUGH IONIZATION-ENERGY DEPOSITION

[1] ARNOLD GW, 1980, PHYSICS MOS INSULATO, P112

[2] NEUTRON-IRRADIATION EFFECTS AND STRUCTURE OF NONCRYSTALLINE SIO2 [J]. JOURNAL OF CHEMICAL PHYSICS, 1974, 61 (10) : 4163 - 4176

[3] RADIATION-INDUCED E'' CENTERS IN CRYSTALLINE SIO2 [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (02) : 213 - 217

[4] ION-BEAM INDUCED LUMINESCENCE IN FUSED-SILICA [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 45 - 53

[5] CREATION AND ANNEALING KINETICS OF MAGNETIC OXYGEN VACANCY CENTERS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3833 - 3838

[6] E1' DEFECT PROFILES IN AR IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4197 - 4199

[7] DEVINE RAB, UNPUB

[8] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205

[9] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257

[10] GALLENER FL, 1982, J NONCRYST SOLIDS, V49, P53

[1] ARNOLD GW, 1980, PHYSICS MOS INSULATO, P112

[2] NEUTRON-IRRADIATION EFFECTS AND STRUCTURE OF NONCRYSTALLINE SIO2 [J]. JOURNAL OF CHEMICAL PHYSICS, 1974, 61 (10) : 4163 - 4176

[3] RADIATION-INDUCED E'' CENTERS IN CRYSTALLINE SIO2 [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (02) : 213 - 217

[4] ION-BEAM INDUCED LUMINESCENCE IN FUSED-SILICA [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 45 - 53

[5] CREATION AND ANNEALING KINETICS OF MAGNETIC OXYGEN VACANCY CENTERS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3833 - 3838

[6] E1' DEFECT PROFILES IN AR IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4197 - 4199

[7] DEVINE RAB, UNPUB

[8] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205

[9] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257

[10] GALLENER FL, 1982, J NONCRYST SOLIDS, V49, P53