Electronic transitions of electrons bound to phosphorus donors in diamond

被引：80

作者：

Gheeraert, E ^{[1
]}

Koizumi, S ^{[1
]}

Teraji, T ^{[1
]}

Kanda, H ^{[1
]}

机构：

[1] NIRIM, Tsukuba, Ibaraki 3050044, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 113卷 / 10期

关键词：

semiconductors; impurities in semiconductors; electronic states (localized);

D O I：

10.1016/S0038-1098(99)00546-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A set of phosphorus doped CVD diamond films was investigated by infrared absorption spectroscopy. The photo-ionisation continuum intensity increases consistently with the phosphorus concentration. Two peaks, at 523 and 562 meV, were observed for the first time, and are attributed to electronic transitions from the phosphorus ground level to the 2P(0) and 2P(+/-) excited states, in good agreement with the effective mass approximation. The optical ionisation energy deduced is 600 meV (+/-20 meV), consistent with Hall effect measurements. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：577 / 580

页数：4

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