The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures

被引：14

作者：

Bougerol, C. ^{[1
]}

Songmuang, R. ^{[1
,3
]}

Camacho, D. ^{[2
]}

Niquet, Y. M. ^{[2
]}

Mata, R. ^{[4
]}

Cros, A. ^{[4
]}

Daudin, B. ^{[1
]}

机构：

[1] Univ Grenoble 1, CEA CNRS Grp Nanophys & Semicond, Inst Neel, F-38054 Grenoble, France

[2] CEA Grenoble, INAC, SP2M, L Sim, F-38054 Grenoble, France

[3] CEA Grenoble, LETI DOPT, F-38054 Grenoble, France

[4] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 29期

关键词：

STRAIN; RAMAN; DISPLACEMENT; GROWTH;

D O I：

10.1088/0957-4484/20/29/295706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AlN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AlN capping layer, in close relationship with the morphology of GaN insertions and with the AlN capping mechanism. The observed plastic relaxation in AlN is consistent with the small critical thickness expected for GaN/AlN radial heterostructures.

引用

页数：5

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