SOI power devices

被引：62

作者：

Udrea, F

Garner, D

Sheng, K

Popescu, A

Lim, HT

Milne, WI

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB2 1PZ, England

[2] Univ Cambridge, Dept Engn, Power Devices Grp, Cambridge CB2 1PZ, England

来源：

ELECTRONICS & COMMUNICATION ENGINEERING JOURNAL | 2000年 / 12卷 / 01期

关键词：

D O I：

10.1049/ecej:20000104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and briefly covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology in power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also briefly analysed.

引用

页码：27 / 40

页数：14

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