A LATERAL COMFET MADE IN THIN SILICON-ON-INSULATOR FILM

被引：2

作者：

COLINGE, JP

CHIANG, SY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期

关键词：

D O I：

10.1109/EDL.1986.26524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：697 / 699

页数：3

共 7 条

[1] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J].

BALIGA, BJ ;

ADLER, MS ;

LOVE, RP ;

GRAY, PV ;

ZOMMER, ND .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :821-828

[2] COMPARISON OF 300-V, 600-V, AND 1200-V N-CHANNEL INSULATED GATE TRANSISTORS [J].

CHOW, TP ;

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :161-163

[3]

CHRISTOLOVEANU S, 1985, ELECTRON LETT, V21, P802

[4] HIGH-SPEED, LOW-POWER, IMPLANTED-BURIED-OXIDE CMOS CIRCUITS [J].

COLINGE, JP ;

HASHIMOTO, K ;

KAMINS, T ;

CHIANG, SY ;

LIU, ED ;

PENG, SS ;

RISSMAN, P .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :279-281

[5] LATERAL RESURFED COMFET [J].

DARWISH, M ;

BOARD, K .

ELECTRONICS LETTERS, 1984, 20 (12) :519-520

[6]

HERVE AJA, 1984, IEDM, P808

[7] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].

RUSSELL, JP ;

GOODMAN, AM ;

GOODMAN, LA ;

NEILSON, JM .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :63-65

← 1 →