Nanometer-scale lithography on H-passivated Si(100) by atomic force microscope in air

被引：30

作者：

Lee, HT

Oh, JS

Park, SJ

Park, KH

Ha, JS

Yoo, HJ

Koo, JY

机构：

[1] ELECT & TELECOMMUN RES INST, TAEJON 305600, SOUTH KOREA

[2] KOREA RES INST STANDARD & SCI, TAEJON 305600, SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.580560

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the mechanical friction method for a fabrication of a Si nanostructure on a H-passivated Si(100) substrate using an atomic force microscope (AFM) in a contact mode in air. The bare Si surface region exposed by the mechanical friction between a silicon nitride tip and Si surface was fully oxidized by ambient oxygens. The oxide mask patterns could withstand a selective wet etching process for pattern transfer. The width of the oxide layer formed by an AFM tip was about 200 Angstrom. As the etching time and scan rate were decreased, the oxide line shape was improved. This study also showed that there exists a critical tip force in the removal of a H-passivating layer. (C) 1997 American Vacuum Society.

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收藏

页码：1451 / 1454

页数：4

相关论文

共 15 条

[1] Atomic force microscopy study of electron beam written contamination structures [J].

Amman, M ;

Sleight, JW ;

Lombardi, DR ;

Welser, RE ;

Deshpande, MR ;

Reed, MA ;

Guido, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :54-62

[2] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

EVANS, CJ ;

POSTEK, MT ;

BENNETT, J .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003

[3] CONTROLLED MANIPULATION OF NANOPARTICLES WITH AN ATOMIC-FORCE MICROSCOPE [J].

JUNNO, T ;

DEPPERT, K ;

MONTELIUS, L ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3627-3629

[4] CONTACT MODE ATOMIC-FORCE MICROSCOPY IMAGING OF NANOMETER-SIZED PARTICLES [J].

JUNNO, T ;

ANAND, S ;

DEPPERT, K ;

MONTELIUS, L ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1995, 66 (24) :3295-3297

[5] HYDROCARBON REACTION WITH HF-CLEANED SI(100) AND EFFECTS ON METAL-OXIDE-SEMICONDUCTOR DEVICE QUALITY [J].

KASI, SR ;

LIEHR, M ;

THIRY, PA ;

DALLAPORTA, H ;

OFFENBERG, M .

APPLIED PHYSICS LETTERS, 1991, 59 (01) :108-110

[6] MACHINING OXIDE THIN-FILMS WITH AN ATOMIC FORCE MICROSCOPE - PATTERN AND OBJECT FORMATION ON THE NANOMETER SCALE [J].

KIM, Y ;

LIEBER, CM .

SCIENCE, 1992, 257 (5068) :375-377

[7] NANOMETER-SCALE LITHOGRAPHY USING THE ATOMIC FORCE MICROSCOPE [J].

MAJUMDAR, A ;

ODEN, PI ;

CARREJO, JP ;

NAGAHARA, LA ;

GRAHAM, JJ ;

ALEXANDER, J .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2293-2295

[8] New and simple method of contact processing characterization using atomic force microscopy [J].

Mariolle, D ;

Lafond, D ;

Morand, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :22-29

[9] ATOMIC-FORCE MICROSCOPE LITHOGRAPHY USING AMORPHOUS-SILICON AS A RESIST AND ADVANCES IN PARALLEL OPERATION [J].

MINNE, SC ;

FLUECKIGER, P ;

SOH, HT ;

QUATE, CF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03) :1380-1385

[10] 1 NM DEEP MECHANICAL PROCESSING OF MUSCOVITE MICE BY ATOMIC-FORCE MICROSCOPY [J].

MIYAKE, S .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2925-2927