Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process

We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf((OC4H9)-C-t)(4) and Si(OC2H5)(4) precursors. Film deposition was carried out at room temperature using the vapor-liquid hybrid deposition technique. The C-V curve of the metal-oxide-semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2-0.3 V. The leakage current density was four orders of magnitude lower than SiO2 reference data in the equivalent-oxide-thickness range of <2.5 nm. (C) 2004 American Institute of Physics.