Activation field and fatigue of (Pb, La)(Zr, Ti)O3 thin films

被引:31
作者
Chen, IW [1 ]
Wang, Y [1 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
关键词
D O I
10.1063/1.125577
中图分类号
O59 [应用物理学];
学科分类号
摘要
For a class of (Pb, La)(Zr, Ti)O-3 ferroelectric thin films, the Merz equation adequately describes the dynamics of switching resistance. A single parameter, activation field, can be used to relate the coercive field throughout the polarization fatigue process. We suggest that the increased switching resistance causes fatigue, and that it could originate from the dielectric degradation of the film. The constitutive equation for the coercive field and its correlation with the switchable polarization offer a tool for fatigue characterization and life prediction. (C) 1999 American Institute of Physics. [S0003-6951(99)02052-5].
引用
收藏
页码:4186 / 4188
页数:3
相关论文
共 30 条
[1]  
AlShareef HN, 1996, APPL PHYS LETT, V68, P690, DOI 10.1063/1.116593
[2]   FATIGUE CHARACTERISTICS OF SOL-GEL DERIVED PB(ZR, TI)O-3 THIN-FILMS [J].
AMANUMA, K ;
HASE, T ;
MIYASAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5211-5214
[3]   The physics of ferroelectric memories [J].
Auciello, O ;
Scott, JF ;
Ramesh, R .
PHYSICS TODAY, 1998, 51 (07) :22-27
[4]   TEMPERATURE DEPENDENT FATIGUE RATES IN THIN-FILM FERROELECTRIC CAPACITORS [J].
Brennan, Ciaran J. ;
Parrella, Ronald D. ;
Larsen, Duane E. .
FERROELECTRICS, 1994, 151 (01) :33-38
[5]   A domain wall model for relaxor ferroelectrics [J].
Chen, IW ;
Wang, Y .
FERROELECTRICS, 1998, 206 (1-4) :245-263
[6]   TEMPERATURE-TIME TEXTURE TRANSITION OF PB(ZR1-XTIX)O-3 THIN-FILMS .2. HEAT-TREATMENT AND COMPOSITIONAL EFFECTS [J].
CHEN, SY ;
CHEN, IW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2337-2344
[7]   Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes [J].
Colla, EL ;
Hong, SB ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N ;
No, K .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2763-2765
[8]   Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].
Colla, EL ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480
[9]   Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors [J].
Colla, EL ;
Kholkin, AL ;
Taylor, D ;
Tagantsev, AK ;
Brooks, KG ;
Setter, N .
MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) :145-148
[10]  
Du XF, 1998, MATER RES SOC SYMP P, V493, P311