Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors

被引：54

作者：

Meyer, JR ^{[1
]}

Hoffman, CA ^{[1
]}

Antoszewski, J ^{[1
]}

Faraone, L ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA,NEDLANDS,WA 6907,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 02期

关键词：

D O I：

10.1063/1.364211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an optimized quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity data. The procedure is applied to an In1-xGaxAs-In1-xAlxAs single quantum well, GaAs-AlAs asymmetric double quantum wells, and Hg1-xCdxTe epitaxial thin films containing multiple carrier species. The results illustrate the reliability, versatility, and sensitivity of the analysis, which is fully computer automated following input of the magnetic-field-dependent data. QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor material and device transport properties. (C) 1997 American Institute of Physics.

引用

页码：709 / 713

页数：5

共 7 条

[1] MAGNETOTRANSPORT CHARACTERIZATION USING QUANTITATIVE MOBILITY-SPECTRUM ANALYSIS [J].