Characterization of plasma deposited Ta2O5 films using grazing incidence x-ray scattering

被引:3
作者
Four, S
Devine, RAB
Brunel, M
机构
[1] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France
[2] INSA, UMR 5511, LPM, F-69321 Villeurbanne, France
[3] CNRS, Cristallog Lab, F-38042 Grenoble, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 02期
关键词
D O I
10.1116/1.582223
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Tantalum pentoxide thin films were prepared by plasma enhanced chemical vapor deposition, using a TaF5 source and a microwave excited H-2/O-2 plasma. The thickness and the density were determined by grazing incidence x-ray scattering, and confirmed by ellipsometry and Rutherford backscattering spectroscopy. Surface roughness measurements by atomic force microscopy and by x-ray scattering differ but suggest the average roughness (rms) is typically 0.28 nm for the amorphous phase and <0.83 nm for the crystallized form. (C) 2000 American Vacuum Society. [S0734-2101(00)08502-X].
引用
收藏
页码:554 / 556
页数:3
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