Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source

被引：4

作者：

Luo, EZ ^{[1
]}

Sundaravel, B

Guo, HY

Wilson, IH

Four, S

Devine, RAB

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Peoples R China

[2] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Shatin, Peoples R China

[3] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.582048

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using Rutherford backscattering spectrometry, nuclear reaction analysis, and elastic recoil detection analysis, we have analyzed the fluorine (F) and hydrogen (H) incorporated in thin tantalum pentoxide (Ta2O5) films on Si substrates prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source. It is shown that both F and H contents depend strongly on the deposition conditions, especially on the microwave power. Narrow resonant reaction F-19(alpha,p)Ne-22 analysis shows that there is considerable diffusion of F into the Si substrate. (C) 1999 American Vacuum Society. [S0734-2101(99)05106-4].

引用

页码：3235 / 3239

页数：5

共 14 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].

Alers, GB ;

Werder, DJ ;

Chabal, Y ;

Lu, HC ;

Gusev, EP ;

Garfunkel, E ;

Gustafsson, T ;

Urdahl, RS .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1517-1519

[2] Leakage current mechanism of amorphous and polycrystalline Ta2O5 films grown by chemical vapor deposition [J].

Aoyama, T ;

Saida, S ;

Okayama, Y ;

Fujisaki, M ;

Imai, K ;

Arikado, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) :977-983

[3] Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator [J].

Autran, JL ;

Devine, R ;

Chaneliere, C ;

Balland, B .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :447-449

[4] DIELECTRICS FOR FIELD-EFFECT TECHNOLOGY [J].

BALK, P .

ADVANCED MATERIALS, 1995, 7 (08) :703-710

[5] Simulated annealing analysis of Rutherford backscattering data [J].

Barradas, NP ;

Jeynes, C ;

Webb, RP .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :291-293

[6] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[7] Detection and depth profiling of 19F using a resonance at 2313 keV in the 19F(α,p)22Ne nuclear reaction [J].

Borgardt, JD ;

Ashbaugh, MD ;

McIntyre, LC ;

Stoner, JO ;

Gregory, RB ;

Azrak, M ;

Wetzel, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :528-532

[8] MICROANALYSIS OF FLUORINE BY NUCLEAR-REACTIONS .1. F-19(P,ALPHA-0)O-16 AND F-19(P, ALPHA-GAMMA)O-16 REACTIONS [J].

DIEUMEGARD, D ;

MAUREL, B ;

AMSEL, G .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :93-103

[9] Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source [J].

Four, S ;

Devine, RAB ;

Luo, EZ ;

Wilson, IH ;

Cheng, HS .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 254 :139-145

[10]

*M PLANK I PLASSM, SIMNRA V4 0

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