Magnetotransport properties of MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures

被引：15

作者：

Takahashi, K

Tanaka, M

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Corp, CREST, Wako, Saitama, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling. (C) 2000 American Institute of Physics. [S0021-8979(00)88308-5].

引用

页码：6695 / 6697

页数：3

共 15 条

[1] Epitaxial ferromagnetic MnAs thin films grown on Si(001): The effect of substrate annealing [J].