Microstructure and structure characteristics of cubic WNx compounds

被引:28
作者
Shen, YG [1 ]
Mai, YW [1 ]
机构
[1] Univ Sydney, Dept Mech & Mechatron Engn, Ctr Adv Mat Technol, Sydney, NSW 2006, Australia
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2000年 / 288卷 / 01期
关键词
WNx films; X-ray diffraction; pair distribution function; transmission electron microscopy;
D O I
10.1016/S0921-5093(00)00822-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Microstructure and structure of cubic WNx compounds were investigated by X-ray photoelectron spectroscopy (XPS), electron energy-loss spectroscopy (EELS), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction. The samples were thin films produced by reactive de magnetron sputtering of tungsten at various N-2 partial pressures in an Ar-N-2 gas mixture. The composition and structure of the films were characterized by XPS, EELS, and XRD. It was found that a two-phase structure consisting of W2N and bcc W was formed in the 0.12 less than or equal to x less than or equal to 0.28 range and a single-phase structure of W2N was formed at higher values of x after annealing of as-deposited samples at 600 degrees C or above. Cross-sectional TEM studies showed that all crystalline WNx films had columnar microstructures. The average column width at stoichiometry of W2N was similar to 15 nm, whereas the column grains were larger with decreasing value of x. Using the electron scattering data collected from a range of crystalline samples for calculating the pair distribution function (RDF) by Fourier transformation in real space, structural details of W-N and W-W bonding in W2N have been obtained. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:47 / 53
页数:7
相关论文
共 21 条
[1]  
Bauccio M., 1994, ASM METALS REFERENCE
[2]   WNX FILMS PREPARED BY REACTIVE ION-BEAM SPUTTER DEPOSITION [J].
BOSSEBOEUF, A ;
FOURRIER, A ;
MEYER, F ;
BENHOCINE, A ;
GAUTHERIN, G .
APPLIED SURFACE SCIENCE, 1991, 53 :353-357
[3]   Electrical resistivity, structure and composition of dc sputtered WNx films [J].
Boukhris, L ;
Poitevin, JM .
THIN SOLID FILMS, 1997, 310 (1-2) :222-227
[4]   Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization [J].
Chang, KM ;
Yeh, TH ;
Deng, IC .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3670-3676
[5]   ELECTRON-DIFFRACTION ANALYSIS OF POLYCRYSTALLINE AND AMORPHOUS THIN-FILMS [J].
COCKAYNE, DJH ;
MCKENZIE, DR .
ACTA CRYSTALLOGRAPHICA SECTION A, 1988, 44 :870-878
[6]  
Egerton R. F, 1996, ELECT ENERGY LOSS SP
[7]   Electron scattering experiments using a post-column imaging electron energy filter [J].
Heinemann, D ;
Mader, W .
ULTRAMICROSCOPY, 1998, 74 (03) :113-122
[8]   RESISTIVITY CHANGES AND PHASE EVOLUTION IN W-N FILMS SPUTTER DEPOSITED IN NE-N2 AND AR-N2 DISCHARGES [J].
HUBER, KJ ;
AITA, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1717-1721
[9]   Structural, optical, and electronic properties of cubic TiNx compounds [J].
Kang, JH ;
Kim, KJ .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :346-350
[10]   NEW METHOD TO IMPROVE THE ADHESION STRENGTH OF TUNGSTEN THIN-FILM ON SILICON BY W2N GLUE LAYER [J].
KIM, YT ;
LEE, CW ;
MIN, SK .
APPLIED PHYSICS LETTERS, 1992, 61 (05) :537-539