RESISTIVITY CHANGES AND PHASE EVOLUTION IN W-N FILMS SPUTTER DEPOSITED IN NE-N2 AND AR-N2 DISCHARGES

被引：27

作者：

HUBER, KJ

AITA, CR

机构：

[1] UNIV WISCONSIN,DEPT MAT,MILWAUKEE,WI 53201

[2] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575277

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1717 / 1721

页数：5

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[4]

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[9] SPUTTERED W-N DIFFUSION-BARRIERS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2246-2254

[10] SUPERCONDUCTING TRANSITION-TEMPERATURES OF REACTIVELY SPUTTERED FILMS OF TANTALUM NITRIDE AND TUNGSTEN NITRIDE [J].

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