SPUTTERED W-N DIFFUSION-BARRIERS

[1] AFFOLTER K, 1985, SPR M MAT RES SOC SA

[2] THERMAL ANNEALING STUDY OF AU-TI-W METALLIZATION ON SILICON [J]. THIN SOLID FILMS, 1980, 69 (01) : 53 - 62

[3] ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 822 - 824

[4] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 781 - 784

[5] BOLZ RE, 1970, CRC HDB TABLES APPLI

[6] Cherezova L. A., 1973, Optics and Spectroscopy, V34, P234

[7] CHEUNG NW, 1980, P S THIN FILM INTERF, V80, P323

[8] THE PREPARATION AND CHARACTERIZATION OF TRANSITION-METAL NITRIDE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (04): : 966 - 967

[9] Ghandhi S.K, 1995, VLSI FABRICATION PRI

[10] Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]

[1] AFFOLTER K, 1985, SPR M MAT RES SOC SA

[2] THERMAL ANNEALING STUDY OF AU-TI-W METALLIZATION ON SILICON [J]. THIN SOLID FILMS, 1980, 69 (01) : 53 - 62

[3] ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 822 - 824

[4] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 781 - 784

[5] BOLZ RE, 1970, CRC HDB TABLES APPLI

[6] Cherezova L. A., 1973, Optics and Spectroscopy, V34, P234

[7] CHEUNG NW, 1980, P S THIN FILM INTERF, V80, P323

[8] THE PREPARATION AND CHARACTERIZATION OF TRANSITION-METAL NITRIDE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (04): : 966 - 967

[9] Ghandhi S.K, 1995, VLSI FABRICATION PRI

[10] Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]