RESISTIVITY CHANGES AND PHASE EVOLUTION IN W-N FILMS SPUTTER DEPOSITED IN NE-N2 AND AR-N2 DISCHARGES

被引：27

作者：

HUBER, KJ

AITA, CR

机构：

[1] UNIV WISCONSIN,DEPT MAT,MILWAUKEE,WI 53201

[2] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575277

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1717 / 1721

页数：5

共 20 条

[11]

KOLAWA E, IN PRESS J ELECTROCH

[12]

PENNING FM, 1925, Z PHYS, V46, P225

[13]

PENNING FM, 1975, Z PHYS, V57, P723

[14] MICROSTRUCTURE, GROWTH, RESISTIVITY, AND STRESSES IN THIN TUNGSTEN FILMS DEPOSITED BY RF SPUTTERING [J].

PETROFF, P ;

SHENG, TT ;

SINHA, AK ;

ROZGONYI, GA ;

ALEXANDER, FB .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2545-2554

[15] UPPER CRITICAL-FIELD OF RF-SPUTTERED WNX AND MONX FILMS [J].

REICHELT, K ;

BERGMANN, G .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2747-2751

[16]

SIETTMANN JR, 1987, THESIS U WISCONSIN M

[17] CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

UCHITOMI, N ;

NAGAOKA, M ;

SHIMADA, K ;

MIZOGUCHI, T ;

TOYODA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1392-1397

[18] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427

[19] CHEMISORPTION OF NITROGEN AT ACTIVATED SITES ON A POLYCRYSTALLINE TUNGSTEN SURFACE [J].

WINTERS, HF ;

HORNE, DE .

SURFACE SCIENCE, 1971, 24 (02) :587-+

[20]

1975, ASTM251257 JOINT COM

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