CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：52

作者：

UCHITOMI, N ^{[1
]}

NAGAOKA, M ^{[1
]}

SHIMADA, K ^{[1
]}

MIZOGUCHI, T ^{[1
]}

TOYODA, N ^{[1
]}

机构：

[1] TOSHIBA CORP,TAMAGAWA WORKS,CTR MICROELECTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1392 / 1397

页数：6

共 5 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] SPUTTERED W-N DIFFUSION-BARRIERS
KATTELUS, HP
KOLAWA, E
AFFOLTER, K
NICOLET, MA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2246 - 2254
[3] UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383
[4] CHARACTERISTICS OF WN/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF SPUTTERING
YAMAGISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12): : L895 - L898
[5] YOKOYAMA N, 1981, IEEE INT SOLID STATE