CHARACTERISTICS OF WN/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF SPUTTERING

被引：39

作者：

YAMAGISHI, H

机构：

[1] Toshiba Corp, Komukai Works,, Kawasaki, Jpn, Toshiba Corp, Komukai Works, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 12期

关键词：

D O I：

10.1143/JJAP.23.L895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TRANSISTORS, FIELD EFFECT

引用

收藏

页码：L895 / L898

页数：4

相关论文

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