Gate-Variable Light Absorption and Emission in a Semiconducting Carbon Nanotube

被引：56

作者：

Steiner, Mathias ^{[1
]}

Freitag, Marcus ^{[1
]}

Perebeinos, Vasili ^{[1
]}

Naumov, Anton ^{[1
,2
]}

Small, Joshua P. ^{[1
]}

Bol, Ageeth A. ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Rice Univ, Appl Phys Program, Houston, TX 77005 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 10期

关键词：

RAMAN-SPECTROSCOPY; SINGLE; EXCITONS; PHOTOLUMINESCENCE; TRANSISTORS; STATES;

D O I：

10.1021/nl9016804

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E(33) state of the nanotube with increasing gate field. The photoluminescence from the E(11) state Is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.

引用

页码：3477 / 3481

页数：5

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