Selective etching of metallic carbon nanotubes by gas-phase reaction

被引：436

作者：

Zhang, Guangyu

Qi, Pengfei

Wang, Xinran

Lu, Yuerui

Li, Xiaolin

Tu, Ryan

Bangsaruntip, Sarunya

Mann, David

Zhang, Li

Dai, Hongjie ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA

来源：

SCIENCE | 2006年 / 314卷 / 5801期

关键词：

D O I：

10.1126/science.1133781

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.

引用

页码：974 / 977

页数：4

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