Organic light-emitting diodes having exclusive near-infrared electrophosphorescence

被引：134

作者：

Williams, Evan L.

Li, Jian

Jabbour, Ghassan E.

机构：

[1] Arizona State Univ, Chem & Mat Engn Dept, Tempe, AZ 85284 USA

[2] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2335275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-infrared (NIR) emission is demonstrated from phosphorescent organic light-emitting diodes containing blends of polymeric host and heavy metal complex, iridium(III) bis(1-pyrenyl-isoquinolinato-N,C-') acetylacetonate. The devices exhibit exclusive NIR emission with a peak value at 720 nm. Forward light output exceeds 100 mu W/cm(2), and the external quantum efficiency is nearly 0.1%. These values are shown to increase upon using a hole blocking layer in the device architecture. (c) 2006 American Institute of Physics.

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页数：3

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