Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

被引：65

作者：

Curry, RJ

Gillin, WP

Knights, AP

Gwilliam, R

机构：

[1] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

[2] Univ Surrey, Sch EEITM, Surrey GU2 7RX, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 15期

关键词：

D O I：

10.1063/1.1316064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.5-mu m light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p(++) silicon as the hole injection contact. The OLEDs use N, N'-diphenyl-N,N'-bis(3-methyl)-1,1'-biphenyl-4,4'-diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00841-X].

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页码：2271 / 2273

页数：3

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