Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells

被引：12

作者：

Sallese, JM ^{[1
]}

Carlin, JF ^{[1
]}

Gailhanou, M ^{[1
]}

Ilegems, M ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,INST MICRO & OPTOELECT,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only starts to decrease when the top barrier thickness falls below 1.5 nm, indicating that radiative recombinations in the islands are very efficient. These results are well understood by a model assuming a vacuum confinement energy close to 5 eV. (C) 1997 American Institute of Physics.

引用

页码：2331 / 2333

页数：3

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