ISLAND FORMATION IN ULTRA-THIN INAS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：86

作者：

CARLIN, JF

HOUDRE, R

RUDRA, A

ILEGEMS, M

机构：

[1] Institute for Micro- and Optoelectronics, Department of Physics, Ecole Polytechnique Fédérale de Lausanne

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high-energy electron diffraction pattern and multiple-lines photoluminescence spectra. An increase of a short range roughness at the InP-InAs interface due to As2 annealing of InP is also observed.

引用

收藏

页码：3018 / 3020

页数：3

相关论文

共 11 条

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[2] GROWTH OF GAINAS BY CHEMICAL BEAM EPITAXY [J].

CARLIN, JF ;

RUDRA, A ;

HOUDRE, R ;

STAEHLI, JL ;

ILEGEMS, M .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :1057-1059

[3] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J].

GOLDSTEIN, L ;

HORIKOSHI, Y ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1489-1492

[4] MODE OF GROWTH IN LP-MOVPE DEPOSITION OF GAINAS INP QUANTUM-WELLS [J].

GRUTZMACHER, D ;

HERGETH, J ;

REINHARDT, F ;

WOLTER, K ;

BALK, P .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (05) :471-479

[5]

HOLLINGER G, IN PRESS APPL SURF S

[6]

HOPKINSON M, 1991, 3RD INT C IND PHOSPH

[7]

Marzin J.Y., 1986, HETEROJUNCTIONS SEMI, P161

[8] LUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C [J].

RUDRA, A ;

CARLIN, JF ;

PROCTOR, M ;

ILEGEMS, M .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :589-593

[9] INAS/INP STRAINED SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

SCHNEIDER, RP ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1990, 57 (19) :1998-2000

[10] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

WEISBUCH, C ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 38 (08) :709-712