LUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C

被引:24
作者
RUDRA, A
CARLIN, JF
PROCTOR, M
ILEGEMS, M
机构
[1] Institute for Micro- and Optoelectronics, Ecole Polytechnique Fédérale de Lausanne
关键词
D O I
10.1016/0022-0248(91)91045-C
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths as narrow as 0.07 meV. The use of substrates misoriented 2-degrees and 3.5-degrees towards (111)A significantly improves the morphology at the cost of a slight increase in the impurity incorporation.
引用
收藏
页码:589 / 593
页数:5
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