HIGH-PURITY INP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)

被引：19

作者：

LAMBERT, M

PERALES, A

VERGNAUD, R

STARCK, C

机构：

[1] Laboratoires de Marcoussis, F-91460 Marcoussis, Route de Nozay

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90345-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of high purity indium phosphide by gas source molecular beam epitaxy (GSMBE) using solid indium source and pure phosphine is reported. 77 K mobilities as high as 112,000 cm2/V·s with residual carrier concentrations of 2 × 1014 cm-3 have been obtained. 4.2 K photoluminescence spectra are dominated by free-exciton and neutral donor-exciton transitions. Very weak acceptor related transitions show a low compensation ratio for this sample. © 1990.

引用

页码：97 / 100

页数：4

共 9 条

[1]

BOUD JM, 1988, I PHYS C SER, V91

[2] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].