VERY HIGH MOBILITY INP GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING SOLID TRIMETHYLINDIUM SOURCE

被引：20

作者：

ZHU, LD

CHAN, KT

BALLANTYNE, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：47 / 48

页数：2

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