CHEMICAL BEAM EPITAXY OF INDIUM-PHOSPHIDE

被引:58
作者
BENCHIMOL, JL
ALAOUI, F
GAO, Y
LEROUX, G
RAO, EVK
ALEXANDRE, F
机构
[1] Centre National d'Etudes des Télécommunications, F-92220 Bagneux
关键词
D O I
10.1016/0022-0248(90)90351-K
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Several aspects of the growth of InP by chemical beam epitaxy, using triethyl-indium and phosphine sources, have been investigated: growth rate, carbon incorporation, Si and Be doping, and substrate misorientation effects. High purity layers could be grown, with 77 K mobilities as high as 112,000 cm2/V·s. An electrical activity of only 25% was measured for Be in InP. A comparison of two substrate misorientations, off (001) towards (111)A or (111)B plane, shows that the latter misorientation resulted in poorer epilayer quality. © 1990.
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页码:135 / 142
页数:8
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