CHEMICAL BEAM EPITAXY OF INDIUM-PHOSPHIDE

被引：58

作者：

BENCHIMOL, JL

ALAOUI, F

GAO, Y

LEROUX, G

RAO, EVK

ALEXANDRE, F

机构：

[1] Centre National d'Etudes des Télécommunications, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90351-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Several aspects of the growth of InP by chemical beam epitaxy, using triethyl-indium and phosphine sources, have been investigated: growth rate, carbon incorporation, Si and Be doping, and substrate misorientation effects. High purity layers could be grown, with 77 K mobilities as high as 112,000 cm2/V·s. An electrical activity of only 25% was measured for Be in InP. A comparison of two substrate misorientations, off (001) towards (111)A or (111)B plane, shows that the latter misorientation resulted in poorer epilayer quality. © 1990.

引用

页码：135 / 142

页数：8

共 18 条

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