GROWTH OF GAINAS BY CHEMICAL BEAM EPITAXY

被引：10

作者：

CARLIN, JF ^{[1
]}

RUDRA, A ^{[1
]}

HOUDRE, R ^{[1
]}

STAEHLI, JL ^{[1
]}

ILEGEMS, M ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST APPL PHYS,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90609-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：1057 / 1059

页数：3

共 11 条

[1] GROWTH OF INP, INGAAS, AND INGAASP ON INP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

ASONEN, H ;

RAKENNUS, K ;

TAPPURA, K ;

HOVINEN, M ;

PESSA, M .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :101-105

[2] EFFECT OF GROWTH TEMPERATURE ON THE OPTICAL, ELECTRICAL AND CRYSTALLOGRAPHIC PROPERTIES OF EPITAXIAL INDIUM GALLIUM-ARSENIDE GROWN BY MOCVD IN AN ATMOSPHERIC-PRESSURE REACTOR [J].

BASS, SJ ;

BARNETT, SJ ;

BROWN, GT ;

CHEW, NG ;

CULLIS, AG ;

PITT, AD ;

SKOLNICK, MS .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :378-385

[3] PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF INGAAS/INP - EFFECT OF MISMATCH STRAIN ON BAND-GAP [J].

BASSIGNANA, IC ;

MINER, CJ ;

PUETZ, N .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4299-4305

[4] CRYSTAL QUALITY INVESTIGATION OF INGAAS INP AND INGAALAS INP SINGLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

FERRARI, C ;

FRANZOSI, P ;

GASTALDI, L ;

TAIARIOL, F .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2628-2632

[5] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[6] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].

HALLIWELL, MAG ;

LYONS, MH ;

HILL, MJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :523-531

[7]

KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619

[8]

MACRANDER AT, 1987, J ELECTROCHEM SOC, V134, P1248

[9] ULTRAUNIFORM INXGA1-XAS LAYERS ON INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATSUI, Y ;

HAYASHI, H ;

KIKUCHI, K ;

IGUCHI, S ;

YOSHIDA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :528-530

[10]

RAZEGHI M, 1989, MOCVD CHALLENGE, V1

← 1 2 →