CRYSTAL QUALITY INVESTIGATION OF INGAAS INP AND INGAALAS INP SINGLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

FERRARI, C ^{[1
]}

FRANZOSI, P ^{[1
]}

GASTALDI, L ^{[1
]}

TAIARIOL, F ^{[1
]}

机构：

[1] CTR STUDI & LAB TELECOMMUN,TORINO,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.341001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2628 / 2632

页数：5

共 9 条

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