GROWTH OF VPE INP-INGAAS ON INP FOR PHOTO-DIODE APPLICATION

被引：22

作者：

YAMAUCHI, Y

SUSA, N

KANBE, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90459-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：402 / 409

页数：8

共 29 条

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[6] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS [J].

ETTENBERG, M .

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[7] EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES [J].

FORREST, SR ;

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STOCKER, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :580-582

[8] OPTOELECTRONIC MATRIX SWITCH USING HETEROJUNCTION SWITCHING PHOTO-DIODES [J].

HARA, EH ;

MACHIDA, S ;

IKEDA, M ;

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ELECTRONICS LETTERS, 1981, 17 (04) :150-151

[9] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

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PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[10] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS LATTICE MATCHED TO (100) INP FOR PHOTO-DIODE APPLICATION [J].

HYDER, SB ;

SAXENA, RR ;

CHIAO, SH ;

YEATS, R .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :787-789

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