Many-body and disorder effects in the optical spectra of extremely high density Be delta-doped GaAs

被引：11

作者：

Fritze, M ^{[1
]}

Kastalsky, A ^{[1
]}

Cunningham, JE ^{[1
]}

Knox, WH ^{[1
]}

Pathak, RN ^{[1
]}

Perakis, IE ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08855

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 07期

关键词：

quantum wells; semiconductors; optical properties; order-disorder effects;

D O I：

10.1016/0038-1098(96)00437-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the highly degenerate hole gas found in extremely high density Be delta-doped GaAs (n(s) approximate to 10(14) cm(-2)). Sharp excitonic-like features (Fermi-edge singularities), dominate the luminescence spectrum at low temperatures and remarkably coexist with a high degree of disorder evidenced by large, temperature independent Urbach tails and low mobilities. This observation coincides with a transition to self-organized clustered Be growth and the population of additional hole subbands. Copyright (C) 1996 Published by Elsevier Science Ltd

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收藏

页码：497 / 501

页数：5

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