Weak localization and transport gap in graphene antidot lattices

被引:134
作者
Eroms, J. [1 ]
Weiss, D. [1 ]
机构
[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
来源
NEW JOURNAL OF PHYSICS | 2009年 / 11卷
关键词
Graphene - Quantum theory;
D O I
10.1088/1367-2630/11/9/095021
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings, the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.
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页数:9
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