High brightness and reliable AlGaInP-based light-emitting diode for POF data links

被引：11

作者：

Dutta, AK ^{[1
]}

Ueda, K ^{[1
]}

Hara, K ^{[1
]}

Kobayashi, K ^{[1
]}

机构：

[1] NEC CORP LTD, OPTOELECT RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 12期

关键词：

AlGaInP; light-emitting diodes (LED's); LED brightness; plastic optical fiber (POF); reliability;

D O I：

10.1109/68.643263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High brightness and reliability operation ring light-emitting diode (LED) is fabricated for plastic optical fiber (POF) link using the distributed Bragg reflector (DBR) mirror and antirefleetion (AR) coating, The ring LED exhibited optical output as high as 3.5 mW at the bias current of 100 mA, Furthermore, the projection lifetime is also estimated to be 1 x 10(6) h at a 35-mA data-link operating current and ambient temperature of 60 degrees C.

引用

页码：1567 / 1569

页数：3

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