Magnetic-field dependence of electron spin relaxation in n-type semiconductors -: art. no. 233206

被引：52

作者：

Bronold, FX ^{[1
]}

Martin, I

Saxena, A

Smith, DL

机构：

[1] Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17487 Greifswald, Germany

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.66.233206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theoretical investigation of the magnetic-field dependence of the longitudinal (T-1) and transverse (T-2) spin-relaxation times of conduction-band electrons in n-type III-V semiconductors. We find that the interplay between the Dyakonov-Perel process and an additional spin-relaxation channel, which originates from the electron wave-vector dependence of the electron g factor, yields a maximal T-2 at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic-field dependence of electron-spin lifetimes.

引用

页码：1 / 4

页数：4

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