Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors -: art. no. 161301

被引：99

作者：

Lau, WH ^{[1
]}

Olesberg, JT ^{[1
]}

Flatté, ME ^{[1
]}

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.64.161301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theory for longitudinal (T-1) and transverse (T-2) electron spin coherence times in zinc-blende semiconductor quantum wells is developed based on a nonperturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGa-As/InP, and GaSb/AlSb quantum wells.

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