Subpicosecond spin relaxation in GaAsSb multiple quantum wells

被引：21

作者：

Hall, KC

Leonard, SW

van Driel, HM

Kost, AR

Selvig, E

Chow, DH

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[2] HRL Labs, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin relaxation times in GaAsxSb1-x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 mu m, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are > 5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 mu m with response time < 250 fs. (C) 1999 American Institute of Physics. [S0003-6951(99)02549-8].

引用

页码：3665 / 3667

页数：3

共 19 条

[1] GaAsSb:: A novel material for 1.3μm VCSELs [J].