HIGHLY REFLECTIVE, LONG-WAVELENGTH ALASSB/GAASSB DISTRIBUTED-BRAGG-REFLECTOR GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES

Surface normal optoelectronic devices operating at long wavelengths (>1.3 μm), require distributed Bragg reflectors (DBRs) with a practical number (≤50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 μm with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate. © 1995 American Institute of Physics.