LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES

被引：1

作者：

DUDLEY, JJ ^{[1
]}

BABIC, DI ^{[1
]}

MIRIN, R ^{[1
]}

YANG, L ^{[1
]}

MILLER, BI ^{[1
]}

RAM, RJ ^{[1
]}

REYNOLDS, T ^{[1
]}

HU, EL ^{[1
]}

BOWERS, JE ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：2119 / 2120

页数：2

共 4 条

[1]

BABA T, 1993, QUANTUM OPTOELECTRON

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HU, EL .

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[3] GAINASP/INP SEMICONDUCTOR MULTILAYER REFLECTOR GRWON BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO SURFACE EMITTING LASER DIODE [J].

IMAJO, Y ;

KASUKAWA, A ;

KASHIWA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1130-L1132

[4] ANALYSIS OF WATER FUSING FOR 1.3 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

RAM, RJ ;

YANG, L ;

NAUKA, K ;

HOUNG, YM ;

LUDOWISE, M ;

MARS, DE ;

DUDLEY, JJ ;

WANG, SY .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2474-2476

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