High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 mu m surface emitting lasers

被引：20

作者：

Genty, F

Almuneau, G

Chusseau, L

Boissier, G

Malzac, JP

Salet, P

Jacquet, J

机构：

[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER,FRANCE

[2] ALCATEL ALSTHOM RECH,ROUTE NOZAY,F-91460 MARCOUSSIS,FRANCE

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 02期

关键词：

distributed Bragg reflector lasers; surface emitting lasers;

D O I：

10.1049/el:19970112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 mu m is obtained owing to a Iarge Burstein-Moss shift of GdAsSb absorption caused by a strong N-doping up to 10(19) cm(-3). Peak reflectivity up to 94% has been measured with only 11.5 periods.

引用

页码：140 / 142

页数：3

共 6 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].