ALASSB/ALGAASSB BRAGG STACKS FOR 1.55-MU-M WAVELENGTH GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

HARMAND, JC

JEANNES, F

LEROUX, G

JUHEL, M

机构：

[1] France Telecom/C NET Laboratoire de Bagneux, 196 avenue Henri Ravera, F-99225 Bagneux Cedex

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 19期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; MOLECULAR BEAM EPITAXIAL GROWTH;

D O I：

10.1049/el:19951142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlAsxSb(1-x)Al0.13Ga0.87AsySb(1-y) quarter-wave distributed Bragg stacks were grown on an InP substrate. With 15 pairs of layers, a peak reflectivity > 0.98 around 1.55 mu m was measured. The refractive index for each material was deduced from reflectivity measurements. We found n = 3.65 for Al0.13Ga0.87AsySb(1-y) and n = 3.11 for AlAsxSb(1-x).

引用

页码：1689 / 1690

页数：2

共 4 条

[1] IMPROVED REFLECTIVITY OF AIPSB/GAPSB BRAGG REFLECTOR FOR 1.55 MU-M WAVELENGTH [J].