IMPROVED REFLECTIVITY OF AIPSB/GAPSB BRAGG REFLECTOR FOR 1.55 MU-M WAVELENGTH

被引：12

作者：

ANAN, T

SHIMOMURA, H

SUGOU, S

机构：

[1] Optoelectronics NEC Laboratory, Real world computing Partnership, c/o Opto-electronics Research Laboratories, NEC Corporation, Ibaraki 305, 34 Miyukigaoka, Tsukuba

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 25期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS;

D O I：

10.1049/el:19941448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the compositional uniformity. A reflectivity of over 99% was obtained at 1.6 mu m from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers.

引用

页码：2138 / 2139

页数：2

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