GAPSB - A NEW TERNARY MATERIAL FOR SCHOTTKY DIODE FABRICATION ON INP

被引：23

作者：

LOUALICHE, S

LECORRE, A

SALAUN, S

CAULET, J

LAMBERT, B

GAUNEAU, M

LECROSNIER, D

DEVEAUD, B

机构：

[1] Centre National d'Etudes des Télécommunications CNET/LAB/OCM, 22301 Lannion Cedex, Route de Trégastel

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Despite its excellent transport properties, the low value of the Schottky barrier height on n-type InP (0.43 eV) prevents its use in electronic applications. A new InP lattice-matched material (GaPSb with 65% Sb) has been grown for the first time by gas source molecular beam epitaxy and studied. The material gap is 0.9 eV and the gold Schottky diode reaches 0.6 eV on this compound. This is the highest barrier ever reported on InP lattice-matched materials which do not contain aluminum. Continuous and picosecond luminescence results show that the GaPSb/InP is a type II heterostructure with DELTA-E(c) = 50 meV at 4 K.

引用

页码：423 / 424

页数：2

共 5 条

[1] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF A NEW SEMICONDUCTOR ALLOY - GAP1-XSBX [J].